IGBTs | NGTB30N60L2WG

IGBT, N-Channel with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V

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Overview

NGTB30N60L2WG is an N-Channel IGBT with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V.

  • Power factor correction of white goods appliance
  • General purpose inverter

  • IH
  • Solar PV
  • UPS

  • IGBT VCE(sat)=1.4V(typ) [IC=30A, VGE=15V]
  • IGBT IC=100A (Tc=25°C)
  • IGBT tf=80ns(typ)
  • Low switching loss in higher frequency applications
  • Maximum junction temperature Tj=175°C
  • Diode VF=1.7V(typ) [IF=30A]
  • Diode trr=70ns(typ)
  • 5µs short circuit capability
  • Pb-Free, Halogen Free and RoHS Compliance

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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NGTB30N60L2WG

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247

340AK

NA

0

TUBE

30

N

-

600

30

1.4

1.7

0.31

1.14

70

-

166

5

-

225

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: NGTB30N60L2WG

Equivalent to wafer fab process: IGN IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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