IGBT, N-Channel with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V

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Overview

NGTB30N60L2WG is an N-Channel IGBT with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V.

  • Power factor correction of white goods appliance
  • General purpose inverter
  • IH
  • Solar PV
  • UPS
  • IGBT VCE(sat)=1.4V(typ) [IC=30A, VGE=15V]
  • IGBT IC=100A (Tc=25°C)
  • IGBT tf=80ns(typ)
  • Low switching loss in higher frequency applications
  • Maximum junction temperature Tj=175°C
  • Diode VF=1.7V(typ) [IF=30A]
  • Diode trr=70ns(typ)
  • 5µs short circuit capability
  • Pb-Free, Halogen Free and RoHS Compliance

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB30N60L2WG

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Last Shipments

CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

-

600

30

1.4

1.7

0.31

1.14

70

-

166

5

-

225

Yes

Price N/A

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