IGBTs | NGTB30N60FWG

IGBT 600V 30A Gen Mkt

Obsolete

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

  • Solar Inverters
  • Motor Drives
  • Uninterruptible Power Supplies (UPS)

  • Optimized for Very Low VCEsat
  • Low Switching Loss
  • Soft Fast Reverse Recovery Diode
  • 5µs Short Circuit Capability

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Irr Typ (A)

Gate Charge Typ (nC)

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Co-Packaged Diode

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NGTB30N60FWG

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340L-02

NA

0

TUBE

30

N

-

600

30

1.45

1.9

0.65

0.65

72

6

170

5

-

167

Yes

Price N/A

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