Name: IGBT, 1350V 30A with Monolithic Free Wheeling Diode.
Brand: IGBT, 1350V 30A with Monolithic Free Wheeling Diode.
SKU: NGTB30N135IHR1

IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides superiorperformance in demanding switching applications, and offers lowon−state voltage with minimal switching losses. The IGBT is wellsuited for resonant or soft switching applications.

Applications

Inductive Heating
Consumer Appliances
Soft Switching

End Products

Industrial

Features

Extremely Efficient Trench with Fieldstop Technology
1350 V Breakdown Voltage
Optimized for Low Losses in IH Cooker Application
Designed for High System Level Robustness
These are Pb−Free Devices

Material Composition

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V_(BR)CES Typ (V)

I_C Max (A)

V_CE(sat) Typ (V)

V_F Typ (V)

E_off Typ (mJ)

E_on Typ (mJ)

T_rr Typ (ns)

I_rr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

E_AS Typ (mJ)

P_D Max (W)

Co-Packaged Diode

Reference Price

NGTB30N135IHR1WG

Obsolete

TO-247-3

340AL

TUBE

1350

2.4

1.7

0.63

220

394

Price N/A

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IGBTs | NGTB30N135IHR1

IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

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