IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides superiorperformance in demanding switching applications, and offers lowon−state voltage with minimal switching losses. The IGBT is wellsuited for resonant or soft switching applications.

  • Inductive Heating
  • Consumer Appliances
  • Soft Switching
  • Industrial
  • Extremely Efficient Trench with Fieldstop Technology
  • 1350 V Breakdown Voltage
  • Optimized for Low Losses in IH Cooker Application
  • Designed for High System Level Robustness
  • These are Pb−Free Devices

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Trr Typ (ns)

Irr Typ (A)

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Co-Packaged Diode

Reference Price

NGTB30N135IHR1WG

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CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

-

1350

30

2.4

1.7

0.63

-

-

-

220

-

-

394

No

Price N/A

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