IGBTs | NGTB30N135IHR1

IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

Obsolete

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides superiorperformance in demanding switching applications, and offers lowon−state voltage with minimal switching losses. The IGBT is wellsuited for resonant or soft switching applications.

  • Inductive Heating
  • Consumer Appliances
  • Soft Switching

  • Industrial

  • Extremely Efficient Trench with Fieldstop Technology
  • 1350 V Breakdown Voltage
  • Optimized for Low Losses in IH Cooker Application
  • Designed for High System Level Robustness
  • These are Pb−Free Devices

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V(BR)CES Typ (V)

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Co-Packaged Diode

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NGTB30N135IHR1WG

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

-

1350

30

2.4

1.7

0.63

-

-

-

220

-

-

394

No

Price N/A

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Reliability Data

Die Related Summary Data

Device: NGTB30N135IHR1WG

Equivalent to wafer fab process: IGN IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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