IGBT, /w Diode 600V 15A NPT

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.

  • Appliance Motor Control
  • General Purpose Inverter
  • White Goods
  • Low Saturation Voltage Resulting in Low Conduction Loss
  • Low Switching Loss in Higher Frequency Applications
  • Soft Fast Reverse Recovery Diode
  • 5µs Short Circuit Capability
  • Excellent Current versus Package Size Performance Density
  • AC and DC Motor Control

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB15N60S1EG

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

-

600

15

1.5

1.65

0.35

0.55

270

5

88

5

-

117

Yes

Price N/A

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