IGBT 1200V 15A SOLAR/UPS

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 10 s Short Circuit Capability
  • These are Pb−Free Devices

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB15N120FL2WG

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Active

CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

Y

-

1200

15

2

2

0.37

1.2

110

11

109

10

-

294

Yes

$2.7193

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