IGBT, 1200 V, 15 A, FS1 Solar/UPS

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.

  • Power Conversion
  • UPS System
  • Solar Inverter
  • Low Saturation Voltage using Trench with Field Stop Technology
  • Low Switching Loss
  • 10 µs Short Circuit Capability
  • Soft, Fast Free Wheeling Diode

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CAD Models

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB15N120FLWG

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

-

1200

15

2

1.8

0.55

1.17

166

12

150

10

-

156

Yes

Price N/A

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