IGBTs | MGW20N120

OBSOLETE - Power Transistor,20A,1200V

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N-Channel Enhancement-Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies.

  • Industry Standard High Power TO-247 Package with Isolated Mounting Hole
  • High Speed Eoff: 160 J/A typical at 125 C
  • High Short Circuit Capability - 10 s minimum
  • Robust High Voltage Termination

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