IGBTs | HGTP12N60C3D

600V, UFS IGBT

Obsolete

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Overview

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49182.

  • Other Industrial

  • 24A, 600V at TC= 25°C
  • Typical Fall Time at TJ=150°C................210ns
  • Short Circuit Rating
  • Low Conduction Loss
  • Hyperfast Anti-Parallel Diode

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HGTP12N60C3D

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

-

600

12

1.65

-

-

-

32

-

-

-

-

-

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: HGTP12N60C3D

Equivalent to wafer fab process: 2F,3B

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

2F,3B

0

552010123

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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