IGBTs | HGTG20N60A4D

600V, SMPS IGBT

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Overview

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

  • Other Industrial

  • <100kHz Operation At 390V, 20A
  • 200kHz Operation At 390V, 12A
  • 600V Switching SOA Capability
  • Typical Fall Time . . . . . . . . . . . . . . . . .55ns at TJ = 125&°C
  • Low Conduction Loss
  • Temperature Compensating SABER™ Model

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HGTG20N60A4D

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

40

1.8

-

-

-

-

-

-

-

-

-

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: HGTG20N60A4D

Equivalent to wafer fab process: 2F,3B

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

2F,3B

0

552010123

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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