IGBTs | HGT1S10N120BNS

IGBT, 1200V, NPT

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Overview

HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

  • Uninterruptible Power Supply

  • 17A, 1200V, TC = 110°C
  • Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 10A
  • Typical Fall Time. . . . . . . . . .140ns at TJ = 150°C
  • Short Circuit Rating
  • Low Conduction Loss

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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HGT1S10N120BNS

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

TUBE

800

N

-

1200

17

2.45

-

-

-

-

-

-

-

-

-

No

Price N/A

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HGT1S10N120BNST

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

N

-

1200

17

2.45

-

0.8

0.32

-

-

100

8

80

298

No

$2.0639

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Reliability Data

Die Related Summary Data

Device: HGT1S10N120BNS

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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