IGBT, 1200V, NPT

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Overview

HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

  • Uninterruptible Power Supply
  • 17A, 1200V, TC = 110°C
  • Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 10A
  • Typical Fall Time. . . . . . . . . .140ns at TJ = 150°C
  • Short Circuit Rating
  • Low Conduction Loss

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Product

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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HGT1S10N120BNST

Active

Pb

A

H

P

D2PAK-3 / TO-263-2

1

260

REEL

800

N

1200

17

2.45

-

0.8

0.32

-

-

100

8

80

298

No

$1.3541

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HGT1S10N120BNS

Last Shipments

Pb

A

H

P

D2PAK-3 / TO-263-2

1

260

TUBE

800

N

1200

17

2.45

-

-

-

-

-

-

-

-

-

No

Price N/A

More Details

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