IGBTs | FGY75T95LQDT

IGBT - 950 V 75 A Field stop trench IGBT

Obsolete

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Overview

Trench Field Stop 4th generation IGBT for High performance power conversion application. Specifically designed with Low Vcesat Operation for slow switching speed where low conduction loss is critical.

  • I Type NPC Inverter
  • T Type NPC inverter

  • Solar inverter
  • UPS

  • Positive Temperature Co-efficient
  • Maximum Junction Temperature : TJ = 175℃
  • Low Saturation Voltage: VCE(Sat) = 1.31V (Typ.) @IC = 75A
  • Tight Parameter Distribution

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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EAS Typ (mJ)

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Co-Packaged Diode

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FGY75T95LQDT

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

N

-

950

75

1.31

2.03

1.8

2

294

~NA~

9175

~NA~

~NA~

453

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGY75T95LQDT

Equivalent to wafer fab process: 3B,IJ

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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