IGBTs | FGY40T120SMD

IGBT, 1200 V, 40 A Field Stop Trench

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Overview

Using innovative field stop trench IGBT technology, onsemi’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

  • FS Trench Technology, Positive Temperature Coefficient
  • High Speed Switching
  • Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • RoHS Compliant

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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FGY40T120SMD

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

Y

FS7

1200

40

1.8

3.8

1.1

2.7

200

-

370

-

-

882

Yes

$6.21

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Reliability Data

Die Related Summary Data

Device: FGY40T120SMD

Equivalent to wafer fab process: 3B,IK

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IK

0

831217026

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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