IGBTs | FGY160T65S_F085

IGBT, 650V, 160A Field Stop, Trench With Soft Fast Recovery Diode

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Overview

  • Automotive Qualified
  • Very low saturation voltage : VCE(sat) = 1.6 V (Typ.) @ IC = 160 A
  • Maximum junction temperature : TJ = 175 °C
  • Positive temperature Co-efficient
  • Tight parameter distribution
  • High input impedance
  • 100% of the parts are dynamically tested
  • Short circuit ruggedness > 6 μs @ 25 °C
  • Copacked with soft, fast recovery Extremefast diode

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Co-Packaged Diode

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FGY160T65SPD-F085

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CU

NA

0

TUBE

450

Y

-

650

240

-

1.4

5.7

12.4

132

-

163

6

-

882

-

$7.7378

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Reliability Data

Die Related Summary Data

Device: FGY160T65SPD-F085

Equivalent to wafer fab process: 3B,IJ

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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