IGBTs | FGL35N120FTD

IGBT, 1200V, 35A, Field Stop Trench

Obsolete

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Overview

Using advanced field stop trench IGBT technology, ON Semiconductor’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.

  • Energy Generation & Distribution
  • Uninterruptible Power Supply

  • Field stop trench technology
  • High speed switching
  • Low saturation voltage: VCE(sat) = 1.68 V @ IC = 35A
  • High input impedance

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Irr Typ (A)

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FGL35N120FTDTU

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-264-3

340CA

NA

0

TUBE

375

N

-

1200

35

1.68

2.7

1.7

2.5

520

7.6

210

-

-

368

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGL35N120FTDTU

Equivalent to wafer fab process: 3B,IL

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IL

1

1920107056

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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