IGBT, 1200 V, 40 A Field Stop Trench

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Overview

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential.

  • Maximum Junction Temperature : TJ = 150°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • Low Saturation Voltage: VCE(sat) =2.3 V @ IC = 40 A
  • 100% of The Parts Tested for ILM(1)
  • Short Circuit Ruggedness > 5 us @ 150°C
  • High Input Impedance
  • RoHS Compliant

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CAD Models

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ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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PD Max (W)

Co-Packaged Diode

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FGL12040WD

Last Shipments

Pb

A

H

P

TO-264-3

NA

0

TUBE

375

N

1200

40

2.3

3.6

1

4.1

71

14

226

-

-

391

Yes

Price N/A

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