IGBTs | FGHL75T65MQDT

IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode

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Overview

onsemi's series of field stop 4th generation IGBTs offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other hi performance power conversion applications.

  • PFC boost converter
  • T-type inverter
  • I-type inverter
  • HERIC inverter

  • UPS
  • Solar Inverters
  • EV charging stations
  • Energy storage systems

  • Positive temperature co-efficient
  • Low Vce(sat)
  • Low Eon and Eoff

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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Co-Packaged Diode

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FGHL75T65MQDT

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

F

FS4

650

75

1.45

1.65

1.25

2.35

107

~NA~

149

~NA~

~NA~

375

Yes

$2.7988

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Reliability Data

Die Related Summary Data

Device: FGHL75T65MQDT

Equivalent to wafer fab process: 3B,IJ

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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