IGBTs | FGH80N60FD2

IGBT, 600V, Field Stop

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Overview

Using novel Field Stop IGBT Technology, onsemi's field stop IGBTs offer the optimum performance for Induction Heating and PFC applications where low conduction and switching losses are essential.

  • Consumer Appliances

  • High Current Capability
  • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A
  • High Input Impedance
  • Fast switching
  • RoHS compliant

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MSL Type

MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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Co-Packaged Diode

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FGH80N60FD2TU

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Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

40

1.8

1.2

0.52

1

125

4.8

120

-

-

290

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGH80N60FD2TU

Equivalent to wafer fab process: 3B,IO

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IO

0

819278237

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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