IGBTs | FGH75T65UPD

650V, 75A, Field Stop Trench IGBT

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Overview

Using innovative field stop trench IGBT technology, onsemi’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.

  • Uninterruptible Power Supply
  • Energy Generation & Distribution

  • Maximum junction temperature: TJ = 175°C
  • Positive temperaure co-efficient for parallel operation
  • High current capability
  • Low saturation voltage: VCE(sat) = 1.65V (Typ.) at IC = 75A
  • High-input impedance
  • Tightened parameter distribution
  • RoHS compliant
  • Short-circuit ruggedness: 5µs at 25°C

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

Gate Charge Typ (nC)

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FGH75T65UPD

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Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

Y

-

650

75

1.65

-

-

-

127

-

-

-

-

-

Yes

$3.0028

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FGH75T65UPD-F155

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Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

Y

-

650

-

-

-

-

-

-

-

-

-

-

-

-

$3.1543

More Details

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Reliability Data

Die Related Summary Data

Device: FGH75T65UPD

Equivalent to wafer fab process: 3B,IL

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IL

1

1920107056

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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