650V, 50A, Field Stop Trench IGBT

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Overview

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.

  • Uninterruptible Power Supply
  • Other Industrial
  • Maximum Junction Temperature : TJ = 175°C
  • Positive Temperaure Co-efficient for easy parallel operating
  • High current capability
  • Low saturation voltage: VCE(sat) = 1.65V(Typ.) @ IC = 50A
  • High input impedance
  • Tightened Parameter Distribution
  • RoHS compliant
  • Short-circuit ruggedness: > 5µs @ 25°C

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CAD Models

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MSL Type

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH50T65UPD

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CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

Y

-

650

50

1.65

-

-

-

144

-

-

-

-

-

Yes

$2.9591

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