IGBTs | FGH50T65SQD-F155

IGBT, 650 V, 50A Field Stop 4 Trench

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Overview

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

  • Industrial inverter
  • UPS
  • Welder
  • PFC
  • Maximum Junction Temperature: TJ =175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Pricing ($/Unit)

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FGH50T65SQD-F155

Active

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

Y

650

-

-

2.2

0.11

0.402

-

-

99

-

-

268

-

$2.3543

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