650V Field stop 4th generation mid speed IGBT with co-pack SiC diode 

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Overview

Using the novel field stop 4th generation IGBT and 1.5 generation SiC Schottky Diode technology in TO-247 4-lead package, FGH4L75T65MQDC50 offers the optimum performance with low conduction and switching losses for high-efficiency operations for industrial applications

  • Solar Inverter
  • UPS
  • Energy Storage System
  • PFC
  • EV Charging Stations
  • Solar Inverter
  • UPS
  • Energy Storage System
  • EV Charging Stations
  • Positive temperature co-efficient
  • Low Vce(sat)
  • Low Eon and Eoff

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Status

ECAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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FGH4L75T65MQDC50

Active, New

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

F

650

75

1.45

1.46

0.96

0.72

~NA~

~NA~

145

~NA~

~NA~

385

Yes

Price N/A

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