IGBTs | FGH4L50T65MQDC50

650V Field stop 4th generation mid speed IGBT with co-pack SiC diode

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Overview

Using the novel field stop 4th generation IGBT and 1.5 generation SiC Schottky Diode technology in TO-247 4-lead package, FGH4L75T65MQDC50 offers the optimum performance with low conduction and switching losses for high-efficiency operations for industrial applications.

  • Solar Inverter
  • UPS
  • Energy Storage System
  • PFC
  • EV Charging Stations

  • Solar Inverter
  • UPS
  • Energy Storage System
  • EV Charging Stations

  • Positive temperature co-efficient
  • Low Vce(sat)
  • Low Eon and Eoff

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V(BR)CES Typ (V)

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Co-Packaged Diode

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FGH4L50T65MQDC50

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CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

-

650

50

1.45

1.46

0.59

0.54

~NA~

~NA~

102

~NA~

~NA~

246

Yes

$5.4759

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