IGBT, 650 V, 40 A Field Stop Trench

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Overview

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer superior con-duction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.

  • Induction Heating Application
  • Microwave Oven
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.33 V ( Typ.) @ IC = 40 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Tighten Parameter Distribution
  • RoHS Compliant
  • Low Conduction Loss Design for Soft Switching Application

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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Co-Packaged Diode

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FGH40T65UQDF-F155

Last Shipments

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

N

650

-

-

1.5

0.31

0.989

-

-

306

-

-

231

-

Price N/A

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