IGBTs | FGH40T65UQDF

IGBT, 650 V, 40 A Field Stop Trench

Obsolete

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Overview

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer superior con-duction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.

  • Induction Heating Application
  • Microwave Oven

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.33 V ( Typ.) @ IC = 40 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Tighten Parameter Distribution
  • RoHS Compliant
  • Low Conduction Loss Design for Soft Switching Application

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V(BR)CES Typ (V)

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FGH40T65UQDF-F155

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Obsolete

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CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

N

-

650

-

-

1.5

0.31

0.989

-

-

306

-

-

231

-

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGH40T65UQDF-F155

Equivalent to wafer fab process: 3B,IJ

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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