IGBT, 650 V, 40 A Field Stop Trench

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Overview

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer superior con-duction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.

  • Induction Heating Application
  • Microwave Oven
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.33 V ( Typ.) @ IC = 40 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Tighten Parameter Distribution
  • RoHS Compliant
  • Low Conduction Loss Design for Soft Switching Application

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH40T65UQDF-F155

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

N

-

650

-

-

1.5

0.31

0.989

-

-

306

-

-

231

-

Price N/A

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