IGBTs | FGH40T65SHDF

IGBT, 650V, 40A Field Stop Trench

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Overview

Using novel field stop IGBT technology, onsemi’s new series of field stop 3rd generation IGBTs offer superior conduction andswitching performance and easy parallel operation. This device is well suited for the resonant or soft switching application suchas induction heating and MWO.

  • Maximum Junction Temperature : TJ = 175°C
  • Positive Temperaure Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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FGH40T65SHDF-F155

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

Y

-

650

-

-

1.5

0.44

1.22

-

-

68

-

-

268

-

$1.6067

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Reliability Data

Die Related Summary Data

Device: FGH40T65SHDF-F155

Equivalent to wafer fab process: 3B,IJ

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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