IGBT, 650V, 40A Field Stop Trench

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Overview

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction andswitching performance and easy parallel operation. This device is well suited for the resonant or soft switching application suchas induction heating and MWO.

  • Maximum Junction Temperature : TJ = 175°C
  • Positive Temperaure Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant

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Product

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH40T65SHDF-F155

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Active

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

Y

-

650

-

-

1.5

0.44

1.22

-

-

68

-

-

268

-

$1.6067

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