IGBTs | FGH30T65UPDT

650V, 30A Field Stop Trench IGBT

Obsolete

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Overview

Using novel field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performancefor solar inverter , UPS and digital power generator where low conduction and switching losses are essential.

  • Maximum Junction Temperature : TJ = 175oC
  • Positive Temperaure Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.65V (Typ.) @ IC = 30A
  • 100% of parts tested ILM(2)
  • High Input Impedance
  • Tightened Parameter Distribution
  • RoHS Compliant
  • Short Circuit Ruggedness > 5us @ 25oC

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V(BR)CES Typ (V)

IC Max (A)

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VF Typ (V)

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Reference Price

FGH30T65UPDT-F155

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

N

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650

-

-

-

-

-

-

-

-

-

-

-

-

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGH30T65UPDT-F155

Equivalent to wafer fab process: 3B,IJ

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IJ

0

1915930880

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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