IGBTs | FGH30S130P

IGBT, 1300V, 30A, Shorted-anode

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Overview

Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.

  • Consumer Appliances

  • High speed switching
  • Low saturation voltage: VCE(sat) =1.75V @ IC = 30A
  • High input impedance
  • RoHS compliant

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V(BR)CES Typ (V)

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FGH30S130P

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Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

1300

30

1.75

1.7

1.22

1.3

-

-

372.3

-

-

500

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGH30S130P

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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