IGBTs | FGH30N60LSD

IGBT, 600V, 30A, PT

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Overview

Using onsemi's planar technology, the FGH30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor.

  • Energy Generation & Distribution

  • Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
  • High Input Impedance
  • Low Conduction Loss

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V(BR)CES Typ (V)

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FGH30N60LSDTU

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

30

1.1

-

-

-

-

-

-

-

-

-

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGH30N60LSDTU

Equivalent to wafer fab process: 3B,IL

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IL

1

1920107056

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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