IGBT, 1200 V, 40 A Field Stop Trench

Last Shipments

Overview

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential.

  • Maximum Junction Temperature : TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • Low Saturation Voltage: VCE(sat) = 2.3 V ( Typ.) @ IC = 40
  • 100% of The Parts Tested for ILM(1)
  • Short Circuit Ruggedness > 5 us @ 150°C
  • High Input Impedance
  • RoHS Compliant

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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Co-Packaged Diode

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FGH12040WD-F155

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Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

N

-

1200

-

-

3.6

1

6.9

-

6.8

226

5

-

428

-

Price N/A

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