IGBT, 650V, 40A Field Stop Trench

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Overview

Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD_F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation.

  • Aux. Inverter
  • Battery Discharge
  • PTC Heater
  • Hybrid Electrical Vehicle
  • Electrical Vehicle
  • AEC-Q101 Qualified
  • Low Saturation Voltage : VCE(sat) = 2.0 V(Typ.) @ IC = 40 A
  • Maximum Junction Temperature : TJ = 175°C
  • Tight Parameter Distribution
  • Positive Temperature Coefficient
  • 100% of the parts are dynamically tested (Note 1
  • Short Circuit Ruggedness >5 μs @ 25°C
  • Fast Switching
  • Copacked with soft, fast recovery diode
  • RoHS Compliant

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGB40T65SPD-F085

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

260

REEL

800

N

-

650

-

-

2

0.28

0.97

-

~NA~

36

5

~NA~

267

-

$1.9165

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