IGBTs | FGB40N60SM

IGBT, 600V, 40A, Field Stop

Obsolete

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Overview

Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder and PFC applications where low conduction and switching losses are essential.

  • Other Industrial

  • Maximum junction temperature : TJ =175 °C
  • Positive temperaure co-efficient for easy parallel operating
  • High current capability
  • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC =40A
  • Fast switching: EOFF =6.5uJ/A
  • Tightened parameter distribution
  • RoHS compliant
  • IR reflow only

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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Co-Packaged Diode

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FGB40N60SM

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

N

-

600

40

1.9

-

0.26

0.87

-

-

119

-

-

349

No

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGB40N60SM

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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