IGBTs | FGAF30S65AQ

IGBT, 650 V,30A Field Stop Trench

Obsolete

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Overview

Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications

  • PFC

  • Air-conditioner
  • Induction Heating
  • Welder
  • Industrial

  • Maximum junction temperature : TJ = 175°C
  • Positive temperaure co-efficient for easy parallel operating
  • High current capability
  • Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 30A
  • High input impedance
  • 100% of the Parts tested for ILM
  • Fast switching
  • Tightened parameter distribution
  • RoHS compliant
  • IGBT with monolithic reverse conducting diode

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Irr Typ (A)

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FGAF30S65AQ

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

30

N

-

650

30

1.4

1.3

0.082

0.295

267

~NA~

58

~NA~

~NA~

83

No

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGAF30S65AQ

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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