IGBT, 650 V, 60 A Field Stop Trench

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Overview

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for Welder applications where low conduction and switching losses are essential.

  • Maximum Junction Temperature : TJ =175°C
  • Positive Temperaure Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) =1.8 V(Typ.) @ IC = 60 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA6560WDF

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Last Shipments

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

-

650

60

1.8

1.8

0.52

2.46

271

-

84

-

-

306

Yes

Price N/A

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