FGA50S110P

IGBT, 1100V, 50A, Shorted-anode

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Datasheet

CAD Model

Overview

Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. This device is tailored to induction cooker and microwave oven.

Features

Intrinsic anti-parallel diode for soft-switching applications
High switching frequency range 10 kHz to 50kHz
High temperature stable behavior (T_jmax = 175oC)
Low saturation voltage drop : V_CE(sat) = 2.06 V @ I_C = 50 A
Robust pot detection noise immunity
RoHS compliant (Pb-free lead plating)

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)CES Typ (V)

I_C Max (A)

V_CE(sat) Typ (V)

V_F Typ (V)

E_off Typ (mJ)

E_on Typ (mJ)

T_rr Typ (ns)

I_rr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

E_AS Typ (mJ)

P_D Max (W)

Co-Packaged Diode

Pricing ($/Unit)

FGA50S110P

Last Shipments

TO-3P-3L

340BZ

TUBE

450

1100

2.06

1.96

0.99

2.24

195

300

Yes

Price N/A

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IGBTs | FGA50S110P

IGBT, 1100V, 50A, Shorted-anode

Overview

Availability & Samples (size)

Email Sales