IGBTs | FGA50N100BNTD2

IGBT, 1000V, NPT Trench

Obsolete

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Overview

Using onsemi's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

  • Uninterruptible Power Supply
  • Other Industrial

  • High Speed Switching
  • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
  • High Input Impedance
  • RoHS Compliant

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Case Outline

MSL Type

MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

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Co-Packaged Diode

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FGA50N100BNTD2

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1000

35

2.5

2.9

-

-

60

-

257

-

-

156

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGA50N100BNTD2

Equivalent to wafer fab process: 3B,IK

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IK

0

831217026

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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