IGBT, 1000V, NPT Trench

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Overview

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

  • Uninterruptible Power Supply
  • Other Industrial
  • High Speed Switching
  • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
  • High Input Impedance
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA50N100BNTD2

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

-

1000

35

2.5

2.9

-

-

60

-

257

-

-

156

Yes

Price N/A

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