IGBT, 1200V, 30A, Field Stop Trench

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Overview

Using advanced field stop trench technology, ON Semiconductor’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.

  • Consumer Appliances
  • Field stop trench technology
  • High speed switching
  • Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A
  • High input impedance

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA30N120FTDTU

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

-

1200

30

1.6

1.3

1.16

0.54

775

43

208

-

-

339

Yes

Price N/A

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