IGBTs | FGA30N120FTD

IGBT, 1200V, 30A, Field Stop Trench

Obsolete

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Overview

Using advanced field stop trench technology, onsemi’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.

  • Consumer Appliances

  • Field stop trench technology
  • High speed switching
  • Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A
  • High input impedance

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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FGA30N120FTDTU

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1200

30

1.6

1.3

1.16

0.54

775

43

208

-

-

339

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGA30N120FTDTU

Equivalent to wafer fab process: 3B,IL

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IL

1

1920107056

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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