IGBT, 1250V, 20A, Shorted-anode

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Overview

Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.

  • Consumer Appliances
  • High speed switching
  • Low saturation voltage: VCE(sat) =2.0V @ IC = 20A
  • High input impedance
  • RoHS compliant

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Product

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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FGA20S125P-SN00336

Last Shipments

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

1250

-

-

1.75

0.5

0.74

-

-

153

-

-

250

-

Price N/A

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