IGBT, 1200V, 15A, NPT Trench

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Overview

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven

  • Consumer Appliances
  • NPT Trench Technology, Positive temperature coefficient
  • Low saturation voltage: VCE(sat), typ = 1.9V@ IC = 15A and TC = 25°C
  • Low switching loss: EOFF, typ = 0.6mJ@ IC = 15A and TC = 25°C
  • Extremely enhanced avalanche capability

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA15N120ANTDTU-F109

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CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

-

1200

-

-

1.7

0.6

3

-

27

120

-

-

186

-

Price N/A

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