IGBTs | AFGBP40T120SWD

AEC Q101 qualified IGBT - Automotive Grade 1200 V 40 A

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Overview

AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT). Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in top-side cooled package (BPAK). The design choice ensures direct thermal contact with the heatsink, resulting in an improvement of the thermal performance. Overall, this device offers the optimum performance with low on state voltage, better thermal performance and minimal switching losses for both hard and soft switching topologies in automotive applications.

  • HEV-EV on board charger
  • Electric vehicles
  • Hybrid electric vehicles
  • AEC Q101 qualified
  • Low Vcesat
  • Low Eoff & Eon

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AFGBP40T120SWD

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Pb

A

H

P

BPAK7 14.00x12.85x3.50, 1.27P

763AA

1

245

REEL

800

No

FS7

1200

40

1.33

1.4

3.82

5.61

555

19.4

155

~NA~

~NA~

681

Yes

$3.7499

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Reliability Data

Die Related Summary Data

Device: AFGBP40T120SWD

Equivalent to wafer fab process: FS7, FRD

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

FS7, FRD

0

2029065257

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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