IGBTs | AFGB30T65SQDN

IGBT 650V FS4 High speed version for OBC application in D2PAK

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Overview

Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB30T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

  • Automotive On Board Charger
  • Automotive DC/DCC converter for HEV

  • EV/PHEV

  • AEC-Q101 Qualified
  • VCE(sat) = 1.6 V (typ.) @ IC = 30 A
  • Low VF soft recovery co-packaged diode

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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AFGB30T65SQDN

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

Y

-

650

30

1.6

1.5

0.16

0.786

131

-

56

-

-

220

Yes

$2.2571

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