IGBTs | NGTB30N120L

IGBT 1200V 30A FS1 Gen Mkt

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

  • Industrial Switching

  • Inverter Welding Machines
  • Industrial Motor Control

  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss

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V(BR)CES Typ (V)

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Co-Packaged Diode

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NGTB30N120LWG

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340L-02

NA

0

TUBE

30

N

-

1200

30

1.75

1.5

1

4.4

-

-

420

5

-

260

Yes

Price N/A

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