General Purpose and Low VCE(sat) Transistors | TIP29B

1.0 A, 80 V NPN Power Bipolar Junction Transistor

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Overview

The 1.0 A, 80 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C (NPN); and TIP30, A, B, C (PNP) are complementary devices.

  • These Devices are Pb−Free and are RoHS Compliant

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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TIP29B

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

-

General Purpose

0.7

1

-

-

-

-

-

15

75

3

30

Price N/A

More Details

TIP29BG

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Active

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

General Purpose

0.7

1

80

80

5

-

1.3

15

75

3

30

$0.404

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Reliability Data

Die Related Summary Data

Device: TIP29BG

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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