General Purpose and Low VCE(sat) Transistors | TIP147F

PNP Epitaxial Darlington Transistor

Obsolete

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Overview

  • This product is general usage and suitable for many different applications.

  • Monolithic Construction with Built In Base-Emitter Shunt Resistors
  • High DC Current Gain: hFE=1000 @ VCE= -4 V, IC= -5 A (Min.)
  • Industrial Use
  • Complement to TIP140F/141F/142F

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Product services, tools and other useful resources related to TIP147F

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

TIP147FTU

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

360

N

PNP

General Purpose

3

10

100

100

5

3.5

3

500

-

-

60

Price N/A

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Reliability Data

Die Related Summary Data

Device: TIP147FTU

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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