General Purpose and Low VCE(sat) Transistors | TIP115

PNP Epitaxial Silicon Darlington Transistor

Obsolete

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Overview

  • This product is general usage and suitable for many different applications.

  • Monolithic Construction with Built In Base-Emitter Shunt Resistors
  • High DC Current Gain: hFE=1000 @ VCE= -4 V, IC= -1 A (Min.)
  • Low Collector-Emitter Saturation Voltage
  • Industrial Use
  • Complementary to TIP110/111/112

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