General Purpose and Low VCE(sat) Transistors | NSVS50031SB3

Bipolar Transistor, 50 V, 3 A, Low VCE(sat), NPN Single

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Overview

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for motor driver, relay driver, DC-DC converter of automotive applications. AEC-Q101qualified and PPAP capable.

  • DC / DC Converter
  • Relay Drivers, Lamp Drivers, Motor Drivers
  • Flash

  • Large Current Capacitance
  • Low Collector to Emitter Saturation Voltage
  • High-Speed Switching
  • High Allowable Power Dissipation
  • AEC-Q101qualified and PPAP capable
  • Ultra small package facilitates miniaturization in end products
    (mounting height : 0.9 mm)

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Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

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NSVS50031SB3T1G

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CAD Model

Pb

A

H

P

CPH-3

318BA

1

260

REEL

3000

Y

NPN

Low VCE(sat)

0.12

3

50

100

6

1.2

-

200

560

360

1.1

$0.1955

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Reliability Data

Die Related Summary Data

Device: NSVS50031SB3T1G

Equivalent to wafer fab process: SSD

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SSD

0

6889897810

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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