General Purpose and Low VCE(sat) Transistors | NST3904DP6

Dual NPN Bipolar Transistor

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Overview

The Dual NPN Bipolar Transistor device is a spin off of our popular SOT23, SOT323, SOT563 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 six leaded surface mount package. With two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.

  • NPN General Purpose Switching Transistor

  • hFE, 100-300
  • Low VCE(sat), <0.4 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • This is a Pb-Free Device

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VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

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VBE(on) (V)

hFE Min

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Reference Price

NST3904DP6T5G

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CAD Model

Pb

A

H

P

SOT-963

527AD

1

260

REEL

8000

N

Dual NPN

General Purpose

0.3

0.2

40

60

6

0.95

-

100

300

200

0.42

$0.0427

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NSVT3904DP6T5G

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CAD Model

Pb

A

H

P

SOT-963

527AD

1

260

REEL

8000

N

Dual NPN

General Purpose

0.3

0.2

40

60

6

0.95

-

100

300

200

0.42

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: NST3904DP6T5G

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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