Dual 60 V, 1 A, Low VCE(sat) PNP Bipolar Transistors in WDFN6

Last Shipments

Overview

onsemi’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability in a small form factor, 2x2 mm plastic leadless package. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

  • High Side Switching
  • Overvoltage Protection

  • Automotive LED Lighting
  • Automotive Airbag Deployment
  • Automotive Instrument Clusters

  • Continuous Collector Current(IC) = -1 A
    Peak Collector Current (ICM) = -2 A
  • Low VCE(sat): -200 mV @ IC = -1 A, IB = -100 mA (Beta: IC/IB = 10)
  • hFE of 140 @ IC = -1 A, VCE = -2 V
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • NSV60100DMTWTBG - Wettable Flanks Packaged Device
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSS60100DMTTBG

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Lifetime

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

Dual PNP

Low VCE(sat)

0.3

1

60

80

6

1.1

0.9

90

-

155

2.27

$0.1933

More Details

NSV60100DMTWTBG

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

Dual PNP

Low VCE(sat)

0.3

1

60

80

6

1.1

0.9

90

-

155

2.27

Price N/A

More Details

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