3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor

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Overview

The combination of low saturation voltage and high gain makes this 3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor an ideal device for high speed switching applications where power saving is a concern.

  • Voltage regulation
  • Power management for portable devices
  • Switching regulator
  • Motor Controls
  • DC-DC converters

  • Battery chargers
  • Portable devices
  • Automotive instrument clusters
  • Computing products (i.e. motherboards, fan control)
  • Computing products
  • Automotive instrument clusters

  • Low Collector-Emitter Saturation Voltage
  • High DC Current Gain
  • High Current-Gain Bandwidth Product
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • NSS40300MZ4 is PNP complimentary device
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSS40301MZ4T1G

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

1

260

REEL

1000

Y

NPN

Low VCE(sat)

0.2

3

40

40

6

1

0.9

200

500

100

2

$0.1608

More Details

NSS40301MZ4T3G

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

1

260

REEL

4000

Y

NPN

Low VCE(sat)

0.2

3

40

40

6

1

0.9

200

500

100

2

$0.1608

More Details

NSV40301MZ4T1G

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

1

260

REEL

1000

Y

NPN

Low VCE(sat)

0.2

3

40

40

6

1

0.9

200

500

100

2

$0.2259

More Details

NSV40301MZ4T3G

Loading...

Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

1

260

REEL

4000

Y

NPN

Low VCE(sat)

0.2

3

40

40

6

1

0.9

200

500

100

2

$0.2259

More Details

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