30 V, 2.0 A NPN Low VCE(sat) Bipolar Junction Transistor

Overview

This 30 V, 2.0 A NPN Low VCE(sat) Bipolar Junction Transistor is a miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
  • General use
  • High Current Gain
  • High Current
  • Low VCE(sat)
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
  • High Cut Off Frequency
  • Low Profile Package
  • Linear Gain (Beta)

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

Reference Price

NSS30201MR6T1G

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Active

CAD Model

Pb

A

H

P

TSOP-6

1

260

REEL

3000

Yes

NPN

Low VCE(sat)

0.2

2

30

50

5

1.1

1.1

300

900

200

1.75

3.00 x 2.75 x 1.00

$0.1953

More Details

SNSS30201MR6T1G

Loading...

Active

CAD Model

Pb

A

H

P

TSOP-6

1

260

REEL

3000

Yes

NPN

Low VCE(sat)

0.2

2

30

50

5

1.1

1.1

300

900

200

1.75

3.00 x 2.75 x 1.00

$0.0739

More Details

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