General Purpose and Low VCE(sat) Transistors | NSS1C300E

3 A, 100 V Low VCE(sat) PNP Transistor

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Overview

  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free and are RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSS1C300ET4G

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Active

CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

Y

PNP

Low VCE(sat)

0.4

3

100

140

6

1

0.9

120

360

-

12.5

$0.3473

More Details

NSV1C300ET4G

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Active

CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

Y

PNP

Low VCE(sat)

0.4

3

100

140

6

1

0.9

120

360

-

12.5

$0.2743

More Details

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Reliability Data

Die Related Summary Data

Device: NSS1C300ET4G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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