General Purpose and Low VCE(sat) Transistors | NSL12AW

High Current PNP Low VCE(sat) Bipolar Transistor

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Overview

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

  • High Current Capability (3 A)
  • High Power Handling (Up to 650 mW)
  • Low VCE(s) (170 mV Typical @ 1 A)
  • Small Size
  • Pb-Free Package is Available

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSL12AWT1

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Obsolete

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

235

REEL

3000

N

PNP

General Purpose

0.29

2

12

-

-

-

-

100

300

-

0.45

Price N/A

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NSL12AWT1G

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Last Shipments

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

PNP

General Purpose

0.29

2

12

12

5

0.95

0.95

100

300

-

0.45

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: NSL12AWT1G

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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